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2SC18 1210HF 15E24BL2 L5242 18R106 2010A LVXC3245 PT21735
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  <3sml-t.onau.ctot ij-*i , one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SA1050 description ? high current capability ? collector-emitter breakdown voltage- : v(br)ceo= -140v(min.) ? complement to type 2sc2460 applications ? designed for power amplifer and general purpose applications. absolute maximum ratings(ta=25tj) pin 1.base 2. better 3. collector (case) to-3 package symbol vcbo vceo vebo ic pc t, tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector power dissipation @tc=25'c junction temperature storage temperature value -140 -140 -5 -12 100 150 -55-150 unit v v v a w ?c ?c rr~i c - 1 v- dim a e c d e ,3, h k i k .sl, u v inin mm max 3900 25.30 7.5c 0.90 mo xs7 8m \0 t 60 1 0 92 54fr xi.. i[ 0 k?m.7^ 19^0 400 30 flo 4 m 1350 1705 1962 420 30 :o 450 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable lit the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SA1050 electrical characteristics tj=25c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) icbo iebo hfe fi parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain current-gain?bandwidth product conditions lc= -30ma; ib= 0 lc=-1ma; ie=0 le=-1ma; lc= 0 lc= -5a; ib= -0.5a vcb=-140v; ie=0 veb= -5v; lc= 0 lc=-1a;vce=-5v k^-ia^ce^-lov min -140 -140 -5 55 typ. 70 max -2.0 -10 -10 240 unit v v v v u a u a mhz hfe classifications r 55-110 0 80-160 y 120-240


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